Avik Ghosh

Principal Investigator

Modern day electronic devices are reaching nanometer dimensions where atomistic effects are dominant. Fundamentally new principles are needed to understand how current flows at these nanometer length scales, traditional macroscopic concepts like mobility and diffusion coefficient need to be replaced by more basic concepts that require an understanding of resistance, friction, and electron transport at their most fundamental level. Regardless of the specific form future electronic devices adopt, it is clear that we need to develop ways to describe and model the electronic properties of device structures engineered on an atomic scale.

  • PhD in Physics, Ohio State University, Columbus, OH, USA (1999).
  • MSc in Physics, Indian Institute of Technology, Kanpur, India (1994).
  • Publications
  • Graphene Klein tunnel transistors for high speed analog RF applications
    Tan et al., Scientific Reports, 2017

  • Spintronic signatures of Klein tunneling in topological insulators
    Xie et al., arXiv:1705.06827, 2017

  • Design rules for interfacial thermal conductance: Building better bridges
    Polanco et al., PRB, 2017

  • From materials to systems: a multiscale analysis of nanomagnetic switching
    Xie et al., arXiv:1703.10214, 2017

  • On the wave and particle nature of phonons contributing to thermal transport in superlattices
    Cheaito et al., Manuscript Submitted, 2016

  • Computational Investigation of Half-Heusler Compounds for Spintronics Applications
    Ma et al., PRB, 2017

  • Fokker—Planck Study of Parameter Dependence on Write Error Slope in Spin-Torque Switching
    Xie et al., ITED, 2017

  • Optimizing the interfacial thermal conductance at gold-alkane junctions from 'First Principles'
    Zhang et al., arXiv:1612.04807, 2016

  • Computational Investigation of Heusler Alloys for Spintronic Applications
    Ma et al., MMM, 2016

  • Nanoelectronics: A Molecular View
    Ghosh, Book, 2016

  • Effects of bulk and interfacial anharmonicity on thermal conductance at solid/solid interfaces
    Polanco et al., arXiv:1610.01015, 2016

  • Electron optics with p-n junctions in ballistic graphene
    Chen et al., Science, 2016

  • First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
    Tan et al., APL, 2016

  • Numerical Fokker-Planck simulation of stochastic write error in spin torque switching with thermal noise
    Xie et al., DRC, 2016

  • First principles study of twisted bilayer MoS2 through band unfolding
    Tan et al., DRC, 2016

  • Current saturation and steep switching in graphene PN junctions using angle-dependent scattering
    Elahi et al., DRC, 2016

  • Synthesis and characterization of Fe-Ti-Sb intermetallic compounds: Discovery of a new Slater-Pauling phase
    Naghibolashrafi et al., PRB, 2016

  • Steep Subthreshold Switching With Nanomechanical FET Relays
    Unluer et al., IEDS, 2016

  • Modified Dirac Hamiltonian for efficient quantum mechanical simulations of micron sized devices
    Habib et al., APL, 2016

  • Spin Transfer Torque: A Multiscale Picture
    Xie et al., Book Chapter, 2016

  • Anisotropy in layered half-metallic Heusler alloy superlattices
    Azadani et al., JAP, 2016

  • Quantum transport at the Dirac point: Mapping out the minimum conductivity from pristine to disordered graphene
    Sajjad et al., PRB, 2015

  • Role of crystal structure and junction morphology on interface thermal conductance
    Polanco et al., PRB, 2015

  • Reducing error rates in straintronic multiferroic nanomagnetic logic by pulse shaping
    Munira et al., Nanotechnology, 2015

  • Chiral Tunneling of Topological States: Towards the Efficient Generation of Spin Current Using Spin-Momentum Locking
    Habib et al., PRL, 2015

  • Transmission Engineering as a Route to Subthermal Switching
    Ghosh, JEDS, 2015

  • How intermixing and anharmonicity enhances interfacial thermal conductance?
    Polanco et al., APS, 2015

  • Extremely large, gate tunable spin Hall angle in 3D Topological Insulator pn junction
    Habib et al., APS, 2015

  • Corrigendum to - Switching of Dipole Coupled Multiferroic Nanomagnets in the Presence of Thermal Noise: Reliability of Nanomagnetic Logic
    Fashami et al., IEEE Nanotechnology, 2014

  • Enhancing phonon flow through one-dimensional interfaces by impedance matching
    Polanco et al., JAP, 2014

  • Conductance of graphene: Role of metal contact, charge puddles and differential gating
    Sajjad, et al., DRC, 2014

  • Tunneling through graphene and topological insulators in presence of pn junction: transport properties and device prospects
    Sajjad et al., APS, 2014

  • Phonon impedance matching: minimizing interfacial thermal resistance of thin films
    Polanco, et al., APS, 2014

  • Manipulating thermal conductance across 3D/1D interface by impedance matching
    Zhang et al., APS, 2014

  • Using Room Temperature Current Noise To Characterize Single Molecular Spectra
    Vasudevan et al., ACS Nano, 2014

  • Manipulating Chiral Transmission by Gate Geometry: Switching in Graphene with Transmission Gaps
    Sajjad et al., ACS Nano, 2013

  • Impedance Matching of Atomic Thermal Interfaces Using Primitive Block Decomposition
    Polanco et al., NMTE, 2013

  • Atomistic deconstruction of current flow in graphene based hetero-junctions
    Sajjad et al., J. Comput. Electron., 2013

  • Effect of interface adhesion and impurity mass on phonon transport at atomic junctions
    Saltonstall et al., JAP, 2013

  • Manifestation of Chiral tunneling at a tilted graphene p-n junction
    Sajjad et al., PRB, 2012

  • A Quasi-Analytical Model for Energy-Delay-Reliability Tradeoff Studies During Write Operations in a Perpendicular STT-RAM Cell
    Munira et al., IEDS, 2012

  • Graphene Nanoribbons: From Chemistry to Circuits
    Tseng et al., Graphene Nanoelectronics, 2012

  • High efficiency switching using graphene based electron optics
    Sajjad et al., APL, 2011

  • Comparative material issues for fast reliable switching in STT-RAMs
    Munira et al., IEEE-NANO, 2016

  • Self consistent parameterized physical MTJ compact model for STT-RAM
    Nigam et al., CAS, 2010

  • Monolithically Patterned Wide–Narrow–Wide All-Graphene Devices
    Unluer et al., IEEE Nano, 2010

  • Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors
    Tseng et al., APL, 2009

  • Publication Statistics

    *Image generated from Scholar Plot

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    Posted 14 Aug 2014