Archie L. Holmes Jr.		Research Interests: Epitaxial Growth of III-V Semiconductors Nanostructures (quantum dots, nanowires, etc.) Electronic and Optoelectronic Devices transistors, detectors, lasers, etc.)
	Professor
	Email address:     archieholmes@virginia.edu Home Page:      Phone:     (434) 924-7770 Fax:     (434) 924-8818 Office:     Thornton Hall - E314

Summary:

Current research interests are focused on the crystal growth of III-V semiconductors and the design and fabrication of electronic and optoelectronics devices. Recent work has focused on the design, growth, fabrication, and testing of GaAs- and InP based avalanche photodiodes (APDs) for applications such as single photon counting, fluorescence spectroscopy. cancer detection, and optical communications. Other projects are focused on developing mid-infrared optoelectronic devices (lasers and detectors) for applications such as high resolution molecular spectroscopy, trace gas monitoring, space based communications, air pollution analysis, non-invasive medical diagnostics, night vision, thermal imaging, and missile tracking.

Background:

B.S.E.E (with highest honors), The University of Texas at Austin

M.S.E.E., The University of California - Santa Barbara

PhD in Electrical Engineering, The University of California - Santa Barbara

Research:

• InP Based Avalanche Photodiode Arrays for Mid Infrared Applications, Army Research Office
• GaAs based Single Photon Counting Arrays for Visible and Short Infrared Applications (joint with Joe Campbell), DARPA
• CCLI: Hands-on Module Development for Student Mastery of Electric Circuit Concepts (joint with John Pearce, UT-Austin), National Science Foundation

Most Recent Publications:

• Sidhu, R.; Zhang, L.; Tan, N.; Duan, N.; Campbell, J.C.; Holmes, A.L.; Hsu, C.-F.; Itzler, M.A., “2.4 µm cutoff wavelength avalanche photodiode on InP substrate”, Electronics Letters 42(3), 181 (2006)
• Davood Shahrjerdi, Michael M. Oye, Archie L. Holmes, Jr., and Sanjay K. Banerjee, “Unpinned metal gate/high-k GaAs capacitors: Fabrication and Characterization”, Applied Physics Letters 89, 043501 (2006)
• Sidhu, R.; Ning Duan; Campbell, J.C.; Holmes, A.L., Jr., “A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells”, IEEE Photonics Technology Letters 17(12), 2715 (2005)
• Sidhu, R.; Chen, H.; Duan, N.; Karve, G.V.; Campbell, J.C.; Holmes, A.L., Jr., “GaAsSb resonant-cavity enhanced avalanche photodiode operating at 1.06 mm”, Electronics Letters, 40(20), 1296 (2004)
• Gauri Karve, Xiaoguang Zheng, Xiaofeng Zhang, Xiaowei Li, Ning Li, Shuling Wang, Feng Ma, Archie Holmes, Jr., Joe C. Campbell, G. S. Kinsey, J. C. Boisvert, T. D. Isshiki, R. Sudharsanan, Donald S. Bethune, and William P. Risk, “Geiger Mode Operation of an In0.53Ga0.47As–In0.52Al0.48As Avalanche Photodiode”, Journal of Quantum Electronics 39(10), 1281 (2003)

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