A Collection of Images of HEBs Fabricated Using the "Suspended Sidewall Nano Patterned Stencil" (SSNaPS) process:

This method can produce nanoscale HEBs using UV lithography and a specialized sidewall deposition process. This is advantageous for array applications, where large quantities of THz mixers are made in parallel.

An SEM image of the a diffusion cooled HEB fabricated with SSNaPS patterning with integrated Au pads/microstrip circuit.

Image of a Ti-line, the nanoscale patterning element generated by the SSNaPS technique.

Antenna/contact pad region of a d-HEB after Au evaporation over Ti-line stencil.

Wide field view of phonon-cooled HEB mixer, whose HEB length is defined by SSNaPS.

Close-up of the SSNaPS fabricated p-HEB.

Image of a Ti-line used as an etch mask for the d-HEB Nb bridge.

A large-field SEM image of the a diffusion cooled HEB fabricated with SSNaPS patterning with integrated Au pads/microstrip circuit.

A close-up view and dimensions of the Nb bridge of the HEB circuit.

Oblique view of a completed SSNaPS d-HEB with antenna/contact pads.

Resistive transition of a SSNaPS patterned Nb d-HEB.

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Last Updated July 16th, 2004
For comments or questions, contact jcs4x@virginia.edu